Altium Eagle OrCad PADS KiCad 
IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
NOVA Part#:
312-2273053-IMW65R039M1HXKSA1
Manufacturer:
Manufacturer Part No:
IMW65R039M1HXKSA1
Standard Package:
30
Technical Datasheet:
Available download format
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N-Channel 650 V 46A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-3-41 | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | CoolSiC™ | |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 7.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V | |
| FET Feature | - | |
| Package / Case | TO-247-3 | |
| Vgs (Max) | +20V, -2V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1393 pF @ 400 V | |
| Power Dissipation (Max) | 176W (Tc) | |
| Other Names | 448-IMW65R039M1HXKSA1 |
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