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N-Channel 100 V 17A (Tc) 79W (Tc) Through Hole TO-220AB
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220AB | |
Base Product Number | IRL530 | |
Technology | MOSFET (Metal Oxide) | |
Series | HEXFET® | |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V | |
FET Feature | - | |
Package / Case | TO-220-3 | |
Vgs (Max) | ±16V | |
FET Type | N-Channel | |
Drain to Source Voltage (Vdss) | 100 V | |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | |
Power Dissipation (Max) | 79W (Tc) | |
Other Names | 64-0095PBF 64-0095PBF-ND *IRL530NPBF SP001578734 |
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