IPD65R380E6

MOSFET N-CH 650V 10.6A TO252-3

NOVA Part#:

312-2268442-IPD65R380E6

Manufacturer:

Manufacturer Part No:

IPD65R380E6

Standard Package:

2,500

Technical Datasheet:

Available download format

N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Series	CoolMOS™ E6
Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
FET Feature	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
Power Dissipation (Max)	83W (Tc)
Other Names	INFINFIPD65R380E6 2156-IPD65R380E6

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