IGN1011L70

GAN, RF POWER TRANSISTOR, L-BAND
NOVA Part#:
308-2256954-IGN1011L70
Manufacturer Part No:
IGN1011L70
Standard Package:
15
Technical Datasheet:

Available download format

RF Mosfet GaN HEMT 50 V 22 mA 1.03GHz ~ 1.09GHz 22dB 80W PL32A2

More Information
CategoryTransistors - FETs, MOSFETs - RF
ManufacturerIntegra Technologies Inc.
RoHS 1
Supplier Device Package PL32A2
Series-
Gain 22dB
Voltage - Test50 V
Noise Figure-
Current - Test 22 mA
Power - Output 80W
Package / CasePL32A2
Current Rating (Amps) -
Voltage - Rated120 V
Frequency 1.03GHz ~ 1.09GHz
Transistor TypeGaN HEMT
Other Names2251-IGN1011L70
EAR99

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