SI1922EDH-T1-GE3

MOSFET 2N-CH 20V 1.3A SOT-363

NOVA Part#:

303-2361081-SI1922EDH-T1-GE3

Manufacturer:

Manufacturer Part No:

SI1922EDH-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6
Base Product Number	SI1922
Package / Case	6-TSSOP, SC-88, SOT-363
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 8V
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.25W
Other Names	SI1922EDH-T1-GE3DKR SI1922EDH-T1-GE3TR SI1922EDHT1GE3 SI1922EDH-T1-GE3CT

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