EPC2106ENGRT

GAN TRANS 2N-CH 100V BUMPED DIE
NOVA Part#:
303-2252782-EPC2106ENGRT
Manufacturer:
Manufacturer Part No:
EPC2106ENGRT
Standard Package:
2,500
Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A - Surface Mount Die

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerEPC
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Die
Package / CaseDie
SerieseGaN®
Current - Continuous Drain (Id) @ 25°C 1.7A
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
FET FeatureGaNFET (Gallium Nitride)
FET Type2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)100V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Power - Max -
Other Names917-EPC2106ENGRTR
917-EPC2106ENGRCT
917-EPC2106ENGRDKR

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