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Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 475A 1250W Chassis Mount -
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | General Electric | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (Tc) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | - | |
Package / Case | Module | |
Series | SiC Power | |
Current - Continuous Drain (Id) @ 25°C | 475A | |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V | |
Vgs(th) (Max) @ Id | 4.5V @ 160mA | |
Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V | |
FET Feature | Silicon Carbide (SiC) | |
FET Type | 2 N-Channel (Half Bridge) | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Input Capacitance (Ciss) (Max) @ Vds | 29.3nF @ 600V | |
Power - Max | 1250W | |
Other Names | 4014-GE12047CCA3 |
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