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Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A - Surface Mount Die
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | EPC | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Base Product Number | EPC2110 | |
Package / Case | Die | |
Series | eGaN® | |
Current - Continuous Drain (Id) @ 25°C | 3.4A | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 700µA | |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
FET Feature | GaNFET (Gallium Nitride) | |
FET Type | 2 N-Channel (Dual) Common Source | |
Drain to Source Voltage (Vdss) | 120V | |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | |
Power - Max | - | |
Other Names | 917-EPC2110ENGRCT 917-EPC2110ENGRTR EPC2110ENGR 917-EPC2110ENGRDKR |
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