EPC2110ENGRT

GAN TRANS 2N-CH 120V BUMPED DIE
NOVA Part#:
303-2248991-EPC2110ENGRT
Manufacturer:
Manufacturer Part No:
EPC2110ENGRT
Standard Package:
2,500
Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A - Surface Mount Die

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerEPC
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Die
Base Product Number EPC2110
Package / CaseDie
SerieseGaN®
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
FET FeatureGaNFET (Gallium Nitride)
FET Type2 N-Channel (Dual) Common Source
Drain to Source Voltage (Vdss)120V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Power - Max -
Other Names917-EPC2110ENGRCT
917-EPC2110ENGRTR
EPC2110ENGR
917-EPC2110ENGRDKR

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