SI4501BDY-T1-GE3

MOSFET N/P-CH 30V/8V 8SOIC

NOVA Part#:

303-2251411-SI4501BDY-T1-GE3

Manufacturer:

Manufacturer Part No:

SI4501BDY-T1-GE3

Standard Package:

2,500

Technical Datasheet:

Available download format

Mosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Base Product Number	SI4501
Package / Case	8-SOIC (0.154", 3.90mm Width)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	12A, 8A
Rds On (Max) @ Id, Vgs	17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
FET Feature	Logic Level Gate
FET Type	N and P-Channel, Common Drain
Drain to Source Voltage (Vdss)	30V, 8V
Input Capacitance (Ciss) (Max) @ Vds	805pF @ 15V
Power - Max	4.5W, 3.1W
Other Names	SI4501BDY-T1-GE3DKR SI4501BDY-T1-GE3CT SI4501BDY-T1-GE3TR

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