SI3590DV-T1-E3

MOSFET N/P-CH 30V 2.5A 6TSOP

NOVA Part#:

303-2247713-SI3590DV-T1-E3

Manufacturer:

Manufacturer Part No:

SI3590DV-T1-E3

Standard Package:

3,000

Technical Datasheet:

Available download format

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3590
Package / Case	SOT-23-6 Thin, TSOT-23-6
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	2.5A, 1.7A
Rds On (Max) @ Id, Vgs	77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
FET Feature	Logic Level Gate
FET Type	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Other Names	SI3590DV-T1-E3CT SI3590DV-T1-E3TR SI3590DV-T1-E3DKR SI3590DVT1E3

In stock Need more?

$0.50760

Not the price you want? Fill the forms and we'll contact you ASAP.

We found other products you might like!