IPG20N10S4L22AATMA1

MOSFET 2N-CH 100V 20A TDSON-8

NOVA Part#:

303-2249860-IPG20N10S4L22AATMA1

Manufacturer:

Manufacturer Part No:

IPG20N10S4L22AATMA1

Standard Package:

5,000

Technical Datasheet:

Available download format

Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount, Wettable Flank PG-TDSON-8-10

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PG-TDSON-8-10
Base Product Number	IPG20N10
Package / Case	8-PowerVDFN
Series	OptiMOS™
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	1755pF @ 25V
Power - Max	60W
Other Names	IPG20N10S4L22AATMA1TR IPG20N10S4L22AATMA1DKR IPG20N10S4L22AATMA1CT SP001091984

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