SI3585DV-T1-GE3

MOSFET N/P-CH 20V 2A 6-TSOP
NOVA Part#:
303-2254141-SI3585DV-T1-GE3
Manufacturer:
Manufacturer Part No:
SI3585DV-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 6-TSOP
Base Product Number SI3585
Package / CaseSOT-23-6 Thin, TSOT-23-6
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Other NamesSI3585DV-T1-GE3CT
SI3585DVT1GE3
SI3585DV-T1-GE3DKR
SI3585DV-T1-GE3TR

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