SI5515DC-T1-GE3

MOSFET N/P-CH 20V 4.4A 1206-8
NOVA Part#:
303-2254326-SI5515DC-T1-GE3
Manufacturer:
Manufacturer Part No:
SI5515DC-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Available download format

Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5515
Package / Case8-SMD, Flat Lead
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 4.4A, 3A
Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W

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