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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Supplier Device Package | VESM | |
Base Product Number | RN1106 | |
Series | - | |
Resistor - Base (R1) | 4.7 kOhms | |
Resistor - Emitter Base (R2) | 47 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
Package / Case | SOT-723 | |
Current - Collector Cutoff (Max) | 500nA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | NPN - Pre-Biased | |
Power - Max | 150 mW | |
Other Names | RN1106MFV,L3F(T RN1106MFVL3F-ND RN1106MFV,L3F(B RN1106MFVL3F(B RN1106MFVL3F(T RN1106MFVL3FDKR RN1106MFVL3F RN1106MFVL3FTR RN1106MFVL3FCT |
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