RN1106MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM
NOVA Part#:
304-2062141-RN1106MFV,L3F
Manufacturer Part No:
RN1106MFV,L3F
Standard Package:
8,000
Technical Datasheet:

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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

More Information
CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerToshiba Semiconductor and Storage
RoHS 1
PackagingTape & Reel (TR)
Mounting TypeSurface Mount
Supplier Device Package VESM
Base Product Number RN1106
Series-
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Package / CaseSOT-723
Current - Collector Cutoff (Max)500nA
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Ic) (Max) 100 mA
Transistor TypeNPN - Pre-Biased
Power - Max 150 mW
Other NamesRN1106MFV,L3F(T
RN1106MFVL3F-ND
RN1106MFV,L3F(B
RN1106MFVL3F(B
RN1106MFVL3F(T
RN1106MFVL3FDKR
RN1106MFVL3F
RN1106MFVL3FTR
RN1106MFVL3FCT

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