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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Supplier Device Package | S-Mini | |
Base Product Number | RN1406 | |
Series | - | |
Resistor - Base (R1) | 4.7 kOhms | |
Resistor - Emitter Base (R2) | 47 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Frequency - Transition | 250 MHz | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Current - Collector Cutoff (Max) | 500nA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | NPN - Pre-Biased | |
Power - Max | 200 mW | |
Other Names | RN1406,LF(B RN1406SLFDKR RN1406SLFCT RN1406SLFTR-ND RN1406SLFCT-ND RN1406LFCT RN1406SLFDKR-ND RN1406LFDKR RN1406,LF(T RN1406SLFTR RN1406SLF RN1406S,LF RN1406LFTR |
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