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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Fairchild Semiconductor | |
RoHS | 1 | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | FJN330 | |
Series | - | |
Resistor - Base (R1) | 22 kOhms | |
Resistor - Emitter Base (R2) | 22 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
Frequency - Transition | 250 MHz | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | NPN - Pre-Biased | |
Power - Max | 300 mW | |
Other Names | FAIFSCFJN3303RTA 2156-FJN3303RTA |
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