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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 140 MHz 250 mW Surface Mount SOT-323
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Infineon Technologies | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-323 | |
Base Product Number | BCR112 | |
Series | - | |
Resistor - Base (R1) | 4.7 kOhms | |
Resistor - Emitter Base (R2) | 4.7 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
Frequency - Transition | 140 MHz | |
Package / Case | SC-70, SOT-323 | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | NPN - Pre-Biased | |
Power - Max | 250 mW | |
Other Names | BCR 112W E6327 BCR 112W E6327-ND BCR112WE6327 BCR112WE6327BTSA1TR BCR112WE6327XT SP000010748 |
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