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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | onsemi | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Base Product Number | MMUN2111 | |
Series | - | |
Resistor - Base (R1) | 10 kOhms | |
Resistor - Emitter Base (R2) | 10 kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Current - Collector Cutoff (Max) | 500nA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | PNP - Pre-Biased + Diode | |
Power - Max | 246 mW | |
Other Names | MMUN2111LT1GOSCT 2156-MMUN2111LT1G-OS MMUN2111LT1GOS MMUN2111LT1GOSTR MMUN2111LT1GOS-ND ONSONSMMUN2111LT1G MMUN2111LT1GOSDKR |
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