Please fill in your information in the form , we will contact you and give you the cad model as soon as possible.
Bipolar (BJT) Transistor NPN 100 V 1 A 100MHz 830 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | PBSS8 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 100nA | |
Voltage - Collector Emitter Breakdown (Max) | 100 V | |
Current - Collector (Ic) (Max) | 1 A | |
Transistor Type | NPN | |
Power - Max | 830 mW | |
Other Names | 934057671126 PBSS8110S AMO PBSS8110S AMO-ND |
Not the price you want? Fill the forms and we'll contact you ASAP.