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Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 500 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | 2PC18 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
Frequency - Transition | 80MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 150 mA | |
Transistor Type | NPN | |
Power - Max | 500 mW | |
Other Names | 2PC1815GR T/R 2PC1815GR T/R-ND 933988980116 |
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