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Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-3P-3L
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P-3L | |
Base Product Number | NJW21194 | |
Series | - | |
Package / Case | TO-3P-3, SC-65-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A, 5V | |
Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A | |
Frequency - Transition | 4MHz | |
Current - Collector Cutoff (Max) | 100µA | |
Voltage - Collector Emitter Breakdown (Max) | 250 V | |
Current - Collector (Ic) (Max) | 16 A | |
Transistor Type | NPN | |
Power - Max | 200 W | |
Other Names | NJW21194G-ND NJW21194GOS |
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