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Bipolar (BJT) Transistor NPN 60 V 5 A - 1.3 W Through Hole TO-126-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-126-3 | |
Base Product Number | KSD1691 | |
Series | - | |
Package / Case | TO-225AA, TO-126-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 10µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 60 V | |
Current - Collector (Ic) (Max) | 5 A | |
Transistor Type | NPN | |
Power - Max | 1.3 W | |
Other Names | KSD1691YSFS KSD1691YS-ND |
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