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Bipolar (BJT) Transistor NPN 550 V 6 A - 32 W Through Hole TO-220F
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220F | |
Base Product Number | BUT11 | |
Series | - | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 2A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 1mA | |
Voltage - Collector Emitter Breakdown (Max) | 550 V | |
Current - Collector (Ic) (Max) | 6 A | |
Transistor Type | NPN | |
Power - Max | 32 W | |
Other Names | 934056321127 BUT11APX-1200 BUT11APX-1200-ND |
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