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Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 125°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-236 | |
Base Product Number | 2SC2713 | |
Series | - | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 2mA, 6V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 120 V | |
Current - Collector (Ic) (Max) | 100 mA | |
Transistor Type | NPN | |
Power - Max | 150 mW | |
Other Names | 2SC2713-BLLFDKR 2SC2713BLTE85LFTR 2SC2713BLTE85LF 2SC2713-BLLFCT 2SC2713-BL,LF(T 2SC2713-BL(TE85L,F 2SC2713BLTE85LFDKR 2SC2713-BL,LF(B 2SC2713BLTE85LFTR-ND 2SC2713BLTE85LFCT 2SC2713BLTE85LFCT-ND 2SC2713BLTE85LFDKR-ND 2SC2713-BLLFTR |
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