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Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(N)
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P(N) | |
Base Product Number | 2SA1943 | |
Series | - | |
Package / Case | TO-3P-3, SC-65-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V | |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A | |
Frequency - Transition | 30MHz | |
Current - Collector Cutoff (Max) | 5µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 230 V | |
Current - Collector (Ic) (Max) | 15 A | |
Transistor Type | PNP | |
Power - Max | 150 W | |
Other Names | 2SA1943N(S1ES) |
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