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Bipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 250 mW Surface Mount TO-236AB
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP Semiconductors | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-236AB | |
Series | Automotive, AEC-Q101 | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
Frequency - Transition | 250MHz | |
Current - Collector Cutoff (Max) | 10nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 30 V | |
Current - Collector (Ic) (Max) | 600 mA | |
Transistor Type | NPN | |
Power - Max | 250 mW | |
Other Names | 2156-PMBT2222,215-954 |
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