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Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A - 2 W Through Hole TO-220
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 | |
Series | - | |
Package / Case | TO-220-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V | |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 2mA | |
Voltage - Collector Emitter Breakdown (Max) | 100 V | |
Current - Collector (Ic) (Max) | 2 A | |
Transistor Type | NPN - Darlington | |
Power - Max | 2 W | |
Other Names | 2368-TIP112 |
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