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Bipolar (BJT) Transistor NPN - Darlington 350 V 4 A - 100 W Through Hole TO-220
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220 | |
Base Product Number | 2ST501 | |
Series | - | |
Package / Case | TO-220-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V | |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 2A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 100µA | |
Voltage - Collector Emitter Breakdown (Max) | 350 V | |
Current - Collector (Ic) (Max) | 4 A | |
Transistor Type | NPN - Darlington | |
Power - Max | 100 W | |
Other Names | 2ST501T-ND 497-16232-5 |
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