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Bipolar (BJT) Transistor NPN 700 V 200 mA - 1 W Through Hole TO-39 (TO-205AD)
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Microsemi Corporation | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-39 (TO-205AD) | |
Series | Military, MIL-PRF-19500/727 | |
Package / Case | TO-205AD, TO-39-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 5mA, 25mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 10nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 700 V | |
Current - Collector (Ic) (Max) | 200 mA | |
Transistor Type | NPN | |
Power - Max | 1 W | |
Other Names | 2N5012S-ND 150-2N5012S |
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