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Bipolar (BJT) Transistor PNP 40 V 600 mA - 800 mW Through Hole TO-39 (TO-205AD)
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Microchip Technology | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-39 (TO-205AD) | |
Series | Military, MIL-PRF-19500/290 | |
Package / Case | TO-205AD, TO-39-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | 1µA | |
Voltage - Collector Emitter Breakdown (Max) | 40 V | |
Current - Collector (Ic) (Max) | 600 mA | |
Transistor Type | PNP | |
Power - Max | 800 mW | |
Other Names | 1086-20745 1086-20745-MIL |
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