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Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 600 mW Through Hole TO-39
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Central Semiconductor Corp | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-39 | |
Series | - | |
Package / Case | TO-205AD, TO-39-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
Frequency - Transition | 200MHz | |
Current - Collector Cutoff (Max) | 10nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 60 V | |
Current - Collector (Ic) (Max) | 600 mA | |
Transistor Type | PNP | |
Power - Max | 600 mW | |
Other Names | 2N2905A LEAD FREE 2N2905ACS-ND 2N2905ACS 1514-2N2905APBFREE |
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