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Bipolar (BJT) Transistor NPN 25 V 50 mA 50MHz 625 mW Through Hole TO-92 (TO-226)
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NTE Electronics, Inc | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92 (TO-226) | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 Long Body | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | |
Frequency - Transition | 50MHz | |
Current - Collector Cutoff (Max) | 50nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 25 V | |
Current - Collector (Ic) (Max) | 50 mA | |
Transistor Type | NPN | |
Power - Max | 625 mW | |
Other Names | 2368-2N5089 |
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