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Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P | |
Base Product Number | 2SA1962 | |
Series | - | |
Package / Case | TO-3P-3, SC-65-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V | |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A | |
Frequency - Transition | 30MHz | |
Current - Collector Cutoff (Max) | 5µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 250 V | |
Current - Collector (Ic) (Max) | 17 A | |
Transistor Type | PNP | |
Power - Max | 130 W | |
Other Names | ONSONS2SA1962OTU 2156-2SA1962OTU |
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