Please fill in your information in the form , we will contact you and give you the cad model as soon as possible.
Bipolar (BJT) Transistor NPN - Darlington 55 V 500 mA 155MHz 625 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | BC61 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 200mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 200µA, 200mA | |
Frequency - Transition | 155MHz | |
Current - Collector Cutoff (Max) | 50µA | |
Voltage - Collector Emitter Breakdown (Max) | 55 V | |
Current - Collector (Ic) (Max) | 500 mA | |
Transistor Type | NPN - Darlington | |
Power - Max | 625 mW | |
Other Names | 933890190112 BC618 BC618-ND |
Not the price you want? Fill the forms and we'll contact you ASAP.