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Bipolar (BJT) Transistor NPN 100 V 2 A 300MHz 800 mW Through Hole TP
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TP | |
Base Product Number | 2SC6099 | |
Series | - | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 165mV @ 100mA, 1A | |
Frequency - Transition | 300MHz | |
Current - Collector Cutoff (Max) | 1µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 100 V | |
Current - Collector (Ic) (Max) | 2 A | |
Transistor Type | NPN | |
Power - Max | 800 mW | |
Other Names | 2156-2SC6099-E-ON ONSONS2SC6099-E |
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