2N3906

T-PNP SI-GEN PUR AMP SW

NOVA Part#:

301-2029484-2N3906

Manufacturer:

Manufacturer Part No:

2N3906

Standard Package:

Technical Datasheet:

Available download format

Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92

More Information
Category	Transistors - Bipolar (BJT) - Single
Manufacturer	NTE Electronics, Inc
RoHS	1
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	-
Voltage - Collector Emitter Breakdown (Max)	40 V
Current - Collector (Ic) (Max)	200 mA
Transistor Type	PNP
Power - Max	625 mW
Other Names	2368-2N3906

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