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Bipolar (BJT) Transistor NPN 60 V 1 A 3MHz 30 W Through Hole TO-126
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | onsemi | |
RoHS | 1 | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-126 | |
Base Product Number | 2N4922 | |
Series | - | |
Package / Case | TO-225AA, TO-126-3 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V | |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A | |
Frequency - Transition | 3MHz | |
Current - Collector Cutoff (Max) | 500µA | |
Voltage - Collector Emitter Breakdown (Max) | 60 V | |
Current - Collector (Ic) (Max) | 1 A | |
Transistor Type | NPN | |
Power - Max | 30 W | |
Other Names | 2N4922GOS |
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