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Bipolar (BJT) Transistor - 125 V 1 A 2MHz 20 W Stud Mount TO-111
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | General Semiconductor | |
RoHS | 1 | |
Operating Temperature | - | |
Mounting Type | Stud Mount | |
Supplier Device Package | TO-111 | |
Series | - | |
Package / Case | TO-111-4, Stud | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 10V | |
Vce Saturation (Max) @ Ib, Ic | 6V @ 100mA, 1A | |
Frequency - Transition | 2MHz | |
Current - Collector Cutoff (Max) | 100µA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 125 V | |
Current - Collector (Ic) (Max) | 1 A | |
Transistor Type | - | |
Power - Max | 20 W | |
Other Names | GSIGSI2N2018 2156-2N2018 |
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