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Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 830 mW Through Hole TO-92-3
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | NXP USA Inc. | |
RoHS | 1 | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-92-3 | |
Base Product Number | PBSS5 | |
Series | - | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A | |
Frequency - Transition | 100MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Current - Collector (Ic) (Max) | 3 A | |
Transistor Type | PNP | |
Power - Max | 830 mW | |
Other Names | 934056902126 PBSS5350S AMO PBSS5350S AMO-ND |
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