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Bipolar (BJT) Transistor - 80 V 3 A 30MHz 6.7 W Through Hole TO-5
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | General Semiconductor | |
RoHS | 1 | |
Operating Temperature | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-5 | |
Series | - | |
Package / Case | TO-205AA, TO-5-3 Metal Can | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V | |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 1A | |
Frequency - Transition | 30MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 80 V | |
Current - Collector (Ic) (Max) | 3 A | |
Transistor Type | - | |
Power - Max | 6.7 W | |
Other Names | GSIGSI2N2849-1 2156-2N2849-1 |
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