HSG1002VE-TL-E

RF 0.035A C BAND GERMANIUM NPN
NOVA Part#:
302-2019429-HSG1002VE-TL-E
Manufacturer Part No:
HSG1002VE-TL-E
Standard Package:
10,000
Technical Datasheet:

Available download format

RF Transistor NPN 3.5V 35mA 38GHz 200mW Surface Mount 4-MFPAK

More Information
CategoryTransistors - Bipolar (BJT) - RF
ManufacturerRenesas Electronics America Inc
RoHS 1
Mounting TypeSurface Mount
Supplier Device Package 4-MFPAK
Series-
Noise Figure (dB Typ @ f)0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Package / Case4-SMD, Gull Wing
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V
Frequency - Transition38GHz
Gain 8dB ~ 19.5dB
Voltage - Collector Emitter Breakdown (Max)3.5V
Current - Collector (Ic) (Max) 35mA
Transistor TypeNPN
Power - Max 200mW
Other Names2156-HSG1002VE-TL-E
RENRNSHSG1002VE-TL-E

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