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RF Transistor NPN 65V 46A 1.09GHz 2300W Chassis Mount M112
Category | Transistors - Bipolar (BJT) - RF | |
Manufacturer | Microsemi Corporation | |
RoHS | 1 | |
Operating Temperature | 200°C (TJ) | |
Mounting Type | Chassis Mount | |
Supplier Device Package | M112 | |
Series | - | |
Noise Figure (dB Typ @ f) | - | |
Package / Case | M112 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 5V | |
Frequency - Transition | 1.09GHz | |
Gain | 6dB | |
Voltage - Collector Emitter Breakdown (Max) | 65V | |
Current - Collector (Ic) (Max) | 46A | |
Transistor Type | NPN | |
Power - Max | 2300W | |
Other Names | MS2473-ND 150-MS2473 |
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