RN4987FE,LF(CT

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TRANS NPN/PNP PREBIAS 0.1W ES6

NOVA Part#:

299-2012758-RN4987FE,LF(CT

Manufacturer:

Manufacturer Part No:

RN4987FE,LF(CT

Standard Package:

4,000

Technical Datasheet:

Available download format

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Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

More Information
Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer	Toshiba Semiconductor and Storage
RoHS	1
Packaging	Tape & Reel (TR)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Base Product Number	RN4987
Series	-
Package / Case	SOT-563, SOT-666
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Frequency - Transition	250MHz, 200MHz
Current - Collector Cutoff (Max)	500nA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max	100mW
Other Names	RN4987FE,LF(CB RN4987FELF(CBCT-ND RN4987FELF(CTTR RN4987FELF(CBCT RN4987FELF(CBTR-ND RN4987FELF(CBDKR-ND RN4987FE(T5LFT)CT RN4987FE(T5LFT)DKR-ND RN4987FE(T5LFT)CT-ND RN4987FELF(CTCT RN4987FELF(CBDKR RN4987FE(T5LFT)TR-ND RN4987FELF(CBTR RN4987FE(T5LFT)TR RN4987FELF(CTDKR RN4987FE(T5L,F,T) RN4987FE(T5LFT)DKR