EMF8T2R

TRANS NPN PREBIAS/NPN 0.15W EMT6
NOVA Part#:
299-2017210-EMF8T2R
Manufacturer:
Manufacturer Part No:
EMF8T2R
Standard Package:
8,000
Technical Datasheet:

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Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

More Information
CategoryTransistors - Bipolar (BJT) - Arrays, Pre-Biased
ManufacturerRohm Semiconductor
RoHS 1
PackagingTape & Reel (TR)
Mounting TypeSurface Mount
Supplier Device Package EMT6
Base Product Number EMF8T2
Series-
Package / CaseSOT-563, SOT-666
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Frequency - Transition250MHz, 320MHz
Current - Collector Cutoff (Max)500nA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Current - Collector (Ic) (Max) 100mA, 500mA
Transistor Type1 NPN Pre-Biased, 1 NPN
Power - Max 150mW

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