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Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Supplier Device Package | US6 | |
Base Product Number | RN2906 | |
Series | - | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Resistor - Base (R1) | 4.7kOhms | |
Resistor - Emitter Base (R2) | 47kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Frequency - Transition | 200MHz | |
Current - Collector Cutoff (Max) | 500nA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 100mA | |
Transistor Type | 2 PNP - Pre-Biased (Dual) | |
Power - Max | 200mW | |
Other Names | RN2906LF(CTTR-ND RN2906LFTR RN2906LF(CTCT RN2906LF(CTDKR RN2906LF(CTTR RN2906LFCT RN2906LF(CTDKR-ND RN2906,LF(CT RN2906LFDKR RN2906LF(CTCT-ND RN2906,LF(CB |
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