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Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.75A - 1W Through Hole 16-PowerDIP (20x7.10)
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | -20°C ~ 85°C (TA) | |
Mounting Type | Through Hole | |
Supplier Device Package | 16-PowerDIP (20x7.10) | |
Base Product Number | ULN2064 | |
Package / Case | 16-PowerDIP (0.300", 7.62mm) | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
Vce Saturation (Max) @ Ib, Ic | 1.4V @ 2mA, 1.25A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | - | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 1.75A | |
Transistor Type | 4 NPN Darlington (Quad) | |
Power - Max | 1W | |
Other Names | 497-2348-5-NDR 497-2348-5 |
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