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Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.8A - 1W Through Hole 16-PowerDIP
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | 16-PowerDIP | |
Base Product Number | L6221 | |
Package / Case | - | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 1.8A | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | - | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 1.8A | |
Transistor Type | 4 NPN Darlington (Quad) | |
Power - Max | 1W | |
Other Names | 497-1429-5-NDR 497-1429-5 E-L6221AS |
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