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Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA - 2.25W Through Hole 18-DIP
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | STMicroelectronics | |
RoHS | 1 | |
Operating Temperature | -20°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | 18-DIP | |
Base Product Number | ULN2803 | |
Package / Case | 18-DIP (0.300", 7.62mm) | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V | |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA | |
Frequency - Transition | - | |
Current - Collector Cutoff (Max) | - | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 500mA | |
Transistor Type | 8 NPN Darlington | |
Power - Max | 2.25W | |
Other Names | 497-2356-5-NDR 497-2356-5 |
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