LS350 DIP 8L

TIGHTLY MATCHED, MONOLITHIC DUAL
NOVA Part#:
298-2009067-LS350 DIP 8L
Manufacturer Part No:
LS350 DIP 8L
Standard Package:
1
Technical Datasheet:

Available download format

Bipolar (BJT) Transistor Array 2 PNP (Dual) 25V 10mA 200MHz 500mW Through Hole 8-DIP

More Information
CategoryTransistors - Bipolar (BJT) - Arrays
ManufacturerLinear Integrated Systems, Inc.
RoHS 1
Operating Temperature 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package 8-DIP
Package / Case8-DIP (0.300", 7.62mm)
Series-
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100µA, 1mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)200pA (ICBO)
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max) 10mA
Transistor Type2 PNP (Dual)
Power - Max 500mW
Other Names3218-LS350DIP8L

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