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Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | Toshiba Semiconductor and Storage | |
RoHS | 1 | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | ES6 | |
Base Product Number | HN1C01 | |
Package / Case | SOT-563, SOT-666 | |
Series | - | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V | |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | |
Frequency - Transition | 80MHz | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Current - Collector (Ic) (Max) | 150mA | |
Transistor Type | 2 NPN (Dual) | |
Power - Max | 100mW | |
Other Names | HN1C01FE-Y(T5LFTDKR HN1C01FE-Y(T5LFTTR HN1C01FE-Y,LF(T HN1C01FE-YLFCT HN1C01FE-Y,LF(B HN1C01FE-YLFTR HN1C01FE-YLFDKR HN1C01FE-Y(T5LFTCT HN1C01FE-Y(T5LFTDKR-ND HN1C01FE-Y(T5L,F,T HN1C01FE-Y(T5LFTCT-ND HN1C01FE-Y(T5LFTTR-ND |
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